SSG4502CE n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -30 v, r ds(on) 23 m ? elektronische bauelemente 26-dec-2011 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipati on. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space. fast switch speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit n-ch p-ch drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 -25 v continuous drain current 1 t a =25 c i d 10 -8.5 a t a =70 c 8.1 -6.8 a pulsed drain current 2 i dm 50 -50 a continuous source current (diode conduction) 1 i s 2.3 -2.1 a total power dissipation 1 t a =25 c p d 2.1 2.1 w t a =70 c 1.3 1.3 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance ratings maximum junction-ambient 1 t<=10sec r ja 62.5 c / w steady state 110 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure sop-8 a h b m d c j k f l e n g ref. millimeter ref. millimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. s1 g1 s2 d1 d1 d2 d2 g2
SSG4502CE n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -30 v, r ds(on) 23 m ? elektronische bauelemente 26-dec-2011 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. n-channel electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static drain-source breakdown voltage v (br)dss 30 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-source leakage current i gss - - 10 na v gs = 20v, v ds =0 drain-source leakage current i dss - - 1 a v ds =24v, v gs =0 on-state drain current 1 i d(on) - - 20 a v ds =5v, v gs =10v static drain-source on-resistance 1 r ds(on) - - 16 m v gs =10v, i d =10a - - 20 v gs =4.5v, i d =8.4a forward transconductance 1 g fs - 40 - s v ds =15v, i d =10a pulsed source current (body diode) 1 i sm - 5 - a dynamic total gate charge q g - 12 nc i d =10a v ds =15v v gs =4.5v gate-source charge q gs - 3.3 - gate-drain (miller) change q gd - 4.5 - turn-on delay time t d(on) - 20 - ns v dd =15v v gs =10v i d =1a r gen =25 rise time t r - 9 - turn-off delay time t d(off) - 70 - fall time t f - 20 - notes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSG4502CE n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -30 v, r ds(on) 23 m ? elektronische bauelemente 26-dec-2011 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. p-channel electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static drain-source breakdown voltage v (br)dss -30 - - v v gs =0, i d =-250 a gate threshold voltage v gs(th) -1 - - v v ds =v gs , i d =-250 a gate-source leakage current i gss - - 10 na v gs =-20v, v ds =0 drain-source leakage current i dss - - -1 a v ds =-24v, v gs =0 on-state drain current 1 i d(on) -50 - - a v ds =-5v, v gs =-10v static drain-source on-resistance 1 r ds(on) - - 23 m v gs =-10v, i d =-8.5a - - 33 v gs =-4.5v, i d =-6.8a forward transconductance 1 g fs - 31 - s v ds =-15v, i d =-9.5a pulsed source current (body diode) 1 i sm - 5 - a dynamic total gate charge q g - 13 nc i d =-10a v ds =-15v v gs =-4.5v gate-source charge q gs - 5.8 - gate-drain (miller) change q gd - 12 - turn-on delay time t d(on) - 15 - ns v dd =-15v v gs =-10v i d =-1a r gen =15 rise time t r - 16 - turn-off delay time t d(off) - 62 - fall time t f - 46 - notes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SSG4502CE n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -30 v, r ds(on) 23 m ? elektronische bauelemente 26-dec-2011 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG4502CE n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -30 v, r ds(on) 23 m ? elektronische bauelemente 26-dec-2011 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG4502CE n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -30 v, r ds(on) 23 m ? elektronische bauelemente 26-dec-2011 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
SSG4502CE n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -30 v, r ds(on) 23 m ? elektronische bauelemente 26-dec-2011 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
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